11-29-2024 11:00 Conference hall (bldg. 119, 3rd floor)

"Modeling the effect of neutron radiation on InAs semiconductor heterostructures"

V.R. Yamurzin

In this research paper, extensive numerical modeling of the impact of neutrons with varying energies on InAs semiconductor films was conducted using Geant4 software. The study encompasses the entire spectrum of reactions that can occur in the material when irradiated by neutrons.
A significant aspect of the work was the detailed investigation of the influence of neutron energy on the reactions occurring within the semiconductor. The results include data on various types of secondary particles generated during the interaction of neutrons with the semiconductor.
This research project is crucial for understanding the physical processes that take place in semiconductors under neutron irradiation and may lead to the development of new methods for controlling and tailoring the properties of semiconductor materials. The obtained results will be used for comparison with experimental data from neutron-irradiated samples subjected to a specific neutron spectrum, allowing for more accurate predictions of the electrophysical characteristics of the semiconductor and its behavior under various conditions.
Furthermore, this study could find applications in various fields, including nuclear energy, electronics, medical technology, and aerospace, where understanding the effects of neutrons on semiconductor materials plays a vital role.
In the presentation, the author will update on the current results of the modeling and outline directions for future research.