Leader: Vladik Yamurzin 

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Scientific problem:

In most investigations, radiation testing typically focuses on the electronic devices, rather than the underlying semiconductor materials. However, data on radiation-induced changes in the parameters of devices (saturation and leakage currents, gain factors, breakdown voltage) are difficult to use to obtain information about the mechanisms of ionizing radiation on devices. Therefore, investigations of the stability of the fundamental optical, electrical and structural properties of semiconductor heterostructures to ionizing neutron irradiation are relevant.

Objective: 

The primary objective of this research is to develop scientific, methodological, hardware and software tools for monitoring the performance of current and promising Hall-effect sensor products for radiation experimental research and testing. Additionally, the goal is to develop a complex of analytical and numerical prototypes for optimizing the thermal, as well as electrical and physical parameters of multi-section HEMTs, taking into account the operation of the device under radiation exposure.