Leader: Aleksandr Doroshkevich 

Work phone number: +7 (496) 216-59-24

Work E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

Scientific problem:

To improve the dynamic performance of high-power and ultra-high-power semiconductor diodes, accelerator modification of the crystal sub-surface layer with hydrogen and/or helium ions is required. A technique for control of the depth of the layer of implanted ions is also required.

Objective: 

Identification of the physical mechanisms of the impact of implanted ions on the electrical characteristics of semiconductor crystals; development of a technique for control of the depth and thickness of the layer of implanted ions  using Rutherford backscattering.

Tasks:

1. Investigation of the electrical properties of silicon crystals after implantation of single-charge hydrogen and helium ions using impedance spectroscopy.
2. Identification of physical mechanisms of the impact of implanted ions on the electrical characteristics of semiconductor crystals;
3. Development of a technique for the control of the depth and thickness of the layer of implanted ions using Rutherford backscattering.
4. Preparation of scientific publications and patent.

Research facilities: 

Experimental infrastructure of the EG-5 accelerator complex