Leader: Doroshkevich Aleksandr

Work E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it. 

Scientific problem:

The effect of homogeneous varizonicity (band-gap grading) in nanoscale ionic crystals opens up prospects for solving a key problem in semiconductor electronics: the diffusion instability of heterostructures, which severely limits the reliability and applicability of conventional semiconductor devices. We propose developing functional media for advanced electronic devices (diodes, field-effect transistors, and bipolar transistors) based on nanoscale particles of ionic crystals with identical chemical composition. We also explore the performance of the resulting devices under exposure to neutron fields and high temperatures. Potential applications of the results include space technologies, nuclear facilities, critical technologies, advanced electronics, and other areas.

Objective: 

The aim of this project is to develop scientific foundations and functional media for advanced electronic devices (diodes, field-effect and bipolar transistors) based on nanosized particles of ionic crystals with identical chemical composition.

Tasks:

1. Optimization of the structure of planar junctions based on YSZ nanoparticles. Optimization of the sizes of contacting nanoparticles.
2. Optimization of the chemical composition of nanoscale ionic crystals for maximizing the performance limits of diodes based on them.
3. Accelerator-based modification of the electronic structure of surface electronic states in nanoparticles.
4. Transition to solid-state charge-transport matrices.
5. Practical implementation of laboratory prototypes of homogeneous electronic devices, such as a diode, field-effect transistor, and bipolar transistor.

Research facilities: 

EG-5 accelerator, X-ray diffractometer, electron microscope, optical microscope, multichannel ADC, potentiostat, impedance meter, chemical laboratory, other infrastructure of the EG-5 accelerator complex and FLNP.

Minimum requirements for applicants

Solid educational background in physics, chemistry, mathematics, nanotechnology, electronics; problem-solving and practical hands-on skills; creativity; ability to work both independently and collaboratively in a multidisciplinary team; diligence and a high degree of responsibility.

Development of functional media for homogeneous electronics based on zirconium oxide nanopowders